| PART |
Description |
Maker |
| IS61QDP2B41M36A2 IS61QDP2B41M36A1 |
1Mx36 and 2Mx18 configuration available
|
Integrated Silicon Solu...
|
| K7S3218T4C K7S3236T4C K7S3236T4C-FECI45 K7S3236T4C |
1Mx36 & 2Mx18 QDRTM II b4 SRAM
1Mx36 & 2Mx18 QDRTM II b4 SRAM 1Mx36
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K7P321874C |
1Mx36 & 2Mx18 SRAM
|
Samsung Electronics
|
| K7P323666M K7P321866M |
1Mx36 & 2Mx18 SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K7R321884M K7R323684M K7R323684M-FC16 K7R321884M-F |
1Mx36 & 2Mx18 QDRTM II b4 SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K7B321835C |
1Mx36 & 2Mx18 Synchronous SRAM
|
Samsung semiconductor
|
| K7S3236T4C K7S3218T4C |
1Mx36 & 2Mx18 QDRTM II b4 SRAM
|
Samsung semiconductor
|
| K7R323684C K7R320984C K7R321884C |
1Mx36, 2Mx18 & 4Mx9 QDR II b4 SRAM
|
Samsung semiconductor
|
| K7K3236T2C K7K3218T2C |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
| DSK7N163601A K7N163601 K7N163601A-QFCI13 K7N163601 |
1Mx36 & 2Mx18 Flow-Through NtRAM
512Kx36 & 1Mx18 Pipelined NtRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K7K3236U2C K7K3218U2C-EC330 K7K3218U2C-FC330 |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
DDR SRAM, PBGA165 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165
|
Samsung semiconductor
Maxim Integrated Products, Inc.
|
| XC1700E XC1701LPC20C XC1701LPC20I XC1701LPD8C XC17 |
Configuration PROM.
XC1700E and XC1700L Series Configuration PROMs
IC,EPROM,128KX1,CMOS,DIP,8PIN,PLASTIC
From old datasheet system
Configuration PROMs 4M X 1 CONFIGURATION MEMORY, PQFP44
Configuration PROMs 256K X 1 CONFIGURATION MEMORY, PQCC20
|
Xilinx Inc
XILINX[Xilinx, Inc]
Xilinx, Inc.
|
